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| SI3831DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Power Switch PRODUCT SUMMARY VDS (V) "7 rDS(on) (W) 0.170 @ VGS = -4.5 V 0.240 @ VGS = -2.5 V ID (A) "2.4 "2.0 FEATURES D D D D Low rDS(on) Symmetrical P-Channel MOSFET Integrated Body Bias For Bi-Directional Blocking 2.5- to 5.5-V Operation Exceeds "2 kV ESD Protected D Solution for High-Side Battery Disconnect Switching (BDS) D Supports Battery Switching in Multiple Battery Cell Phones, PDAs and PCS Products D Low Profile, Small Footprint TSOP-6 Package DESCRIPTION The SI3831DV is a low on-resistance p-channel power MOSFET providing bi-directional blocking and conduction. Bi-directional blocking is facilitated by combining a 4-terminal symmetric p-channel MOSFET with a body bias selector circuit*. Circuit operation automatically biases the p-channel body to the most positive source/drain potential thereby maintaining a reverse bias across the diode present between the source/drain terminals. Off-state device blocking characteristics are symmetric, facilitating bi-directional blocking for high-side battery switching in portable products. Gate drive is facilitated by negatively biasing the gate relative to the body potential. The off-state is achieved by biasing the gate to the most positive supply voltage or to the body potential. The SI3831DV is available in a 6-pin TSOP-6 package rated for the -25 to 85C commercial temperature range. APPLICATION CIRCUITS AC/DC Adapter Charger Body Bias Loads Body Bias SI3831DV DC/DC SI3831DV Body Bias Body Bias SI3831DV SI3831DV Charger FIGURE 1. Charger Demultiplexing FIGURE 2. Battery Multiplexing (High-Side Switch) *Patents pending. Document Number: 70785 S-56947--Rev. C, 28-Dec-98 www.vishay.com S FaxBack 408-970-5600 2-1 SI3831DV Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION S/D (6) TSOP-6 Top View BODY Body Bias Generator 1 6 S/D P-Channel MOSFET G (3) ESD Protection 3 mm SUB 2 5 SUB G 3 4 D/S D/S (4) BODY (1) SUBSTRATE (GND) (2, 5) 2.75 mm FIGURE 3. FIGURE 4. ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage, Source-Drain Voltagea Source-Body/Drain-Body/Gate-Body Voltage Body-Substrate Voltage Continuous Drain-to-Source Current (TJ = 150_C)a, b Pulsed Drain-to-Source Currenta Maximum Power Dissipationb Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VSB, VDB, VGB VBSUB ID IDM PD TJ, Tstg Limit -7.0 to +7.0 0.3 to -7.0 +7.0 to -0.3 "2.4 "2.0 "8 1.5 1.0 -55 to 150 Unit V A W _C RECOMMENDED OPERATING RANGE Parameter Drain-Source Voltagea Gate-Drain,/Gate-Source Voltage Source-Body/Drain-Body/Gate-Body Voltage Drain-to-Source Currenta, b Body-Source Current Symbol VDS, VDS VGD, VGS VSB, VDB, VGB IDS IBS Range -5.5 to 5.5 0 to -5.5 0 to -5.5 "2.4 0 to 10 Unit V A mA THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Symbol RthJA Limit 80 125 Unit _C/W C/W Notes a. Bi-directional. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board, Steady-State. www.vishay.com S FaxBack 408-970-5600 Document Number: 70785 S-56947--Rev. C, 28-Dec-98 2-2 SI3831DV Vishay Siliconix SPECIFICATIONS (VBS = 0 V, TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = -250 mA VDS = 0 V, VGS = -5.5 V to +0.3 V VDS = -5.5 V, VGS = 0 V, VSB = 0 V VDS = -5.5 V, VGS = 0 V, VSB = 0 V, TJ = 70_C VDS = -3 V, VGS = -4.5 V VDS = -3 V, VGS = -2.5 V VGS = -4.5 V, ID = -2.4 A rDS( ) DS(on) VGS = -2.5 V, ID = -2.0 A -8 A -3 0.130 0.180 0.170 0.240 W -0.4 "100 -1 -5 V nA mA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta ID(on) Drain Source On State Resistancea Drain-Source On-State Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = -3 V, RL = 3 W 3 V, ID ^ -1.0 A, VGEN = -4.5 V RG = 6 W 10A 4 5 V, VDS = -5 V, VGS = -4.5 V ID = -2.4 A 5V 4 5 V, 24 2.0 0.23 0.14 12 55 90 85 25 110 ns 180 170 4.0 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. GATE BUFFER REFERENCE Body Bias Body Bias SI3831DV Load SI3831DV Load IN IN FIGURE 5. Gate Buffer Referenced to Most Positive Supply FIGURE 6. Gate Buffer Referenced to Body Bias Pin Document Number: 70785 S-56947--Rev. C, 28-Dec-98 www.vishay.com S FaxBack 408-970-5600 2-3 SI3831DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VGS = 5 thru 3 V 2.5 V 6 I D - Drain Current (A) I D - Drain Current (A) 6 8 TC = -55_C 25_C Transfer Characteristics 2V 4 125_C 4 1.5 V 2 1V 0 0 1 2 3 4 5 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.4 250 Capacitance r DS(on) - On-Resistance ( W ) 200 C - Capacitance (pF) 0.3 Coss 150 Ciss 0.2 VGS = 2.5 V VGS = 4.5 V 100 0.1 50 Crss 0 0 2 4 ID - Drain Current (A) 6 8 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) 4.5 VDS = 3 V ID = 2.4 A Gate Charge 1.4 1.3 r DS(on) - On-Resistance ( W ) (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 3.6 VGS = 4.5 V ID = 2.4 A 2.7 1.8 0.9 0 0 0.4 0.8 1.2 1.6 2.0 Qg - Total Gate Charge (nC) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70785 S-56947--Rev. C, 28-Dec-98 SI3831DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 8 0.5 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 1 TJ = 25_C r DS(on) - On-Resistance ( W ) 0.4 I S - Source Current (A) 0.3 ID = 2.4 A ID = 0.5 A 0.2 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 15 Single Pulse Power 0.3 12 V GS(th) Variance (V) 0.2 ID = 250 mA 0.1 Power (W) 9 6 0.0 3 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 0.01 0.10 Time (sec) 1.00 10.00 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 10-1 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) Document Number: 70785 S-56947--Rev. C, 28-Dec-98 www.vishay.com S FaxBack 408-970-5600 2-5 SI3831DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Bi-Directional Blocking Drain-Source Voltage 10 VGB = -2.5 V 6 I D - Drain Current (A) 2 VGB = 0 V -2 -6 -10 -12 -8 -4 0 4 8 12 VDS - Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70785 S-56947--Rev. C, 28-Dec-98 |
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